In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit

Faber S, Kohlhepp B, Dobusch J, Kaiser J, Dürbaum T (2023)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2023

Publisher: IEEE

Event location: Aalborg, Denmark

DOI: 10.23919/EPE23ECCEEurope58414.2023.10264660

Abstract

Wide bandgap power devices are pushing the trend of increasing switching frequencies even further, giving rise to a frequency shift of EMC noise. As a result, parasitic elements gain significantly in importance. For this reason, parasitic capacitances of a half-bridge circuit PCB are studied by means of numerical simulations. After an introduction into the half-bridge circuit in terms of CM noise, the focus is layed on the simulation methods applied, the generation of a suitable simulation model as well as the development of a more intuitive equivalent circuit. Simulation results for typical measurement conditions are presented and compared with each other.

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How to cite

APA:

Faber, S., Kohlhepp, B., Dobusch, J., Kaiser, J., & Dürbaum, T. (2023). In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit. In Proceedings of the 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe). Aalborg, Denmark: IEEE.

MLA:

Faber, Samuel, et al. "In-Depth Study of the Parasitic Capacitances of a Half-bridge Circuit." Proceedings of the 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark IEEE, 2023.

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