Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC

Lehmeyer J, Fuchs A, Bornträger T, Popp MA, Weber HB, Krieger M (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Defect and Diffusion Forum Trans Tech Publications

Book Volume: 426

Pages Range: 17-21

DOI: 10.4028/p-02xh85

Abstract

We present a detailed study of the behavior of the photoluminescence (PL) of the TS color center in 4H-SiC under controlled mechanical strain. We have investigated the TS1 line under varying strain, including its reaction to compression and tension. We use emission polarization measurements to gain access to the orientation of the underlying defects. We put our results in context with previous findings and find good agreement, corroborating the proposed microscopic model.

Authors with CRIS profile

Johannes Lehmeyer Chair of Applied Physics Alexander Fuchs Chair of Applied Physics Matthias Albert Popp Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

Additional Organisation(s)

FAU Profilzentrum Licht.Materie.Quantentechnologien (FAU LMQ)

How to cite

APA:

Lehmeyer, J., Fuchs, A., Bornträger, T., Popp, M.A., Weber, H.B., & Krieger, M. (2023). Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC. Defect and Diffusion Forum, 426, 17-21. https://dx.doi.org/10.4028/p-02xh85

MLA:

Lehmeyer, Johannes, et al. "Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC." Defect and Diffusion Forum 426 (2023): 17-21.

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