Hochreiter A, Möller MN, Groß F, Krieger M, Weber HB (2023)
Publication Type: Journal article, Letter
Publication year: 2023
Book Volume: 13
Article Number: 19086
URI: https://www.nature.com/articles/s41598-023-46110-2
DOI: 10.1038/s41598-023-46110-2
Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for
projected functionalities in the realm of spin‑based quantum technologies, nano‑mechanical
resonators and photonics on‑a‑chip. For shaping 3D structures out of SiC wafers, predominantly
dry‑etching techniques are used. SiC is nearly inert with respect to wet‑etching, occasionally
photoelectrochemical etching strategies have been applied. Here, we propose an electrochemical
etching strategy that solely relies on defining etchable volumina by implantation of p‑dopants.
Together with the inertness of the n‑doped regions, very sharp etching contrasts can be achieved. We
present devices as different as monolithic cantilevers, disk‑shaped optical resonators and membranes
etched out of a single crystal wafer. The high quality of the resulting surfaces can even be enhanced by
thermal treatment, with shape‑stable devices up to and even beyond 1550 °C. The versatility of our
approach paves the way for new functionalities on SiC as high‑performance multi‑functional wafer
platform.
APA:
Hochreiter, A., Möller, M.-N., Groß, F., Krieger, M., & Weber, H.B. (2023). Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers. Scientific Reports, 13. https://dx.doi.org/10.1038/s41598-023-46110-2
MLA:
Hochreiter, André, et al. "Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers." Scientific Reports 13 (2023).
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