AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance
Kong M, Osvet A, Barabash A, Zhang K, Hu H, Elia J, Erban C, Yokosawa T, Spiecker E, Batentschuk M, Brabec C (2023)
Publication Type: Journal article, Original article
Publication year: 2023
Journal
Authors with CRIS profile
Mengqin Kong
Technische Fakultät
Andres Osvet
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Anastasia Barabash
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Kaicheng Zhang
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Huiying Hu
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Jack Elia
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Tadahiro Yokosawa
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Erdmann Spiecker
Miroslaw Batentschuk
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Christoph Brabec
Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)
Additional Organisation(s)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Nanoanalysis and Electron Microscopy (CENEM)
Involved external institutions
Germany (DE)How to cite
APA:
Kong, M., Osvet, A., Barabash, A., Zhang, K., Hu, H., Elia, J.,... Brabec, C. (2023). AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance. ACS Applied Materials and Interfaces. https://doi.org/10.1021/acsami.3c11140
MLA:
Kong, Mengqin, et al. "AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Anti-Reflective Layer in Enhancing Photovoltaic Performance." ACS Applied Materials and Interfaces (2023).
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