Witzigmann B, Römer F (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: SPIE
Book Volume: 12415
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: San Francisco, CA, USA
ISBN: 9781510659353
DOI: 10.1117/12.2652797
Hexagonal III-nitride semiconductors exhibit internal polarization fields along their c-direction. In regions with graded mole fractions, the polarization gradient creates bound volume charge densities. Due to their electrostatic effect, they affect the balance of mobile charges, and can lead to polarization induced doping. In this contribution, drift-diffusion type simulations are employed in order to analyze a pn-junction based on polarization induced charges, and an analytical formula for calculating the bound charge density is given.
APA:
Witzigmann, B., & Römer, F. (2023). Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study. In Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. San Francisco, CA, USA: SPIE.
MLA:
Witzigmann, Bernd, and Friedhard Römer. "Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study." Proceedings of the Physics and Simulation of Optoelectronic Devices XXXI 2023, San Francisco, CA, USA Ed. Bernd Witzigmann, Marek Osinski, Yasuhiko Arakawa, SPIE, 2023.
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