Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, Kaempfe T, De S, Chakrabarti B (2023)

Publication Type: Journal article

Publication year: 2023

Journal

ACS Applied Electronic Materials ACS Publications

Book Volume: 5

Pages Range: 812-820

Journal Issue: 2

DOI: 10.1021/acsaelm.2c01357

Abstract

Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential example of CIM, which conduct a parallel search over a queue or stack to obtain the matched entries for a given input data. CAM cells offer the ability for massively parallel searches in a single clock cycle throughout an entire CAM array for the input query, thereby enabling pattern matching and searching functionality. Therefore, CAM cells are used extensively for pattern matching or search operations in data-centric computing. This paper investigates the impact of retention degradation on IGZO-based FeTFT on the multibit operation in content CAM cell applications. We propose a scalable multibit 1FeTFT-1T-based CAM cell composed of only one FeTFT and one transistor, thus significantly improving the density and energy efficiency compared with conventional complementary metal-oxide-semiconductor (CMOS)-based CAM. We successfully demonstrate the operations of our proposed CAM with storage and search by exploiting the multilevel states of the experimentally calibrated IGZO-based FeTFT devices. We also investigate the impact of retention degradation on the search operation. Our proposed IGZO-based 3-bit and 2-bit CAM cell shows 104 s and 106 s retention, respectively. The single-bit CAM cell shows lifelong (10 years) retention.

Authors with CRIS profile

Shawn Sanctis Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Indian Institute of Technology Madras IN India (IN) Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) / Fraunhofer Institute for Photonic Microsystems DE Germany (DE) Fraunhofer-Institut für Integrierte Schaltungen (IIS) DE Germany (DE)

How to cite

APA:

Sk, M.R., Thunder, S., Lehninger, D., Sanctis, S., Raffel, Y., Lederer, M.,... Chakrabarti, B. (2023). Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation. ACS Applied Electronic Materials, 5(2), 812-820. https://dx.doi.org/10.1021/acsaelm.2c01357

MLA:

Sk, Masud Rana, et al. "Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation." ACS Applied Electronic Materials 5.2 (2023): 812-820.

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