Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy

Bergmann L, Pobegen G, Schlogl D, Schulze H, Weber HB, Krieger M (2022)

Publication Type: Conference contribution

Publication year: 2022

Journal

2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2022-May

Pages Range: 221-224

Conference Proceedings Title: Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Event location: Vancouver, BC CA

ISBN: 9781665422017

DOI: 10.1109/ISPSD49238.2022.9813648

Abstract

A new, simplified, and more versatile current transient spectroscopy (CTS) measurement setup is demonstrated. With this setup, the depth profile of the platinum-hydrogen (PtH) defect in fully processed silicon high-voltage (HV) test diodes is investigated. It is shown that a proton field stop (FS) at the backside of these test devices suppresses the in-diffusion of hydrogen (H) leading to a significant reduction of the PtH defect concentration throughout the entire volume of the diode. Furthermore, a strong correlation of the depth profile of the PtH defect and the leakage current is observed. Thus, we conclude that the PtH defect is the main generation center in the investigated devices.

Authors with CRIS profile

Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

Involved external institutions

Kompetenzzentrum Automobil- und Industrie-Elektronik GmbH AT Austria (AT) Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Bergmann, L., Pobegen, G., Schlogl, D., Schulze, H., Weber, H.B., & Krieger, M. (2022). Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 221-224). Vancouver, BC, CA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Bergmann, Lena, et al. "Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy." Proceedings of the 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Vancouver, BC Institute of Electrical and Electronics Engineers Inc., 2022. 221-224.

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