Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide

Parthasarathy SK, Kallinger B, Kaiser F, Berwian P, Dasari D, Friedrich J, Nagy R (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Physical Review Applied American Physical Society

Book Volume: 19

Article Number: 034026

Issue: 3

DOI: 10.1103/PhysRevApplied.19.034026

Authors with CRIS profile

Roland Nagy Juniorprofessur für Elektronische Bauelemente

Additional Organisation(s)

FAU Profilzentrum Licht.Materie.Quantentechnologien (FAU LMQ)

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Parthasarathy, S.K., Kallinger, B., Kaiser, F., Berwian, P., Dasari, D., Friedrich, J., & Nagy, R. (2023). Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide. Physical Review Applied, 19. https://dx.doi.org/10.1103/PhysRevApplied.19.034026

MLA:

Parthasarathy, Shravan Kumar, et al. "Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide." Physical Review Applied 19 (2023).

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