Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques

Lehmeyer J, Citak T, Weber HB, Krieger M (2023)

Publication Type: Journal article

Publication year: 2023

Journal

Electronics Letters Institution of Engineering and Technology (IET)

Article Number: e12752

DOI: 10.1049/ell2.12752

Open Access Link: https://doi.org/10.1049/ell2.12752

Authors with CRIS profile

Johannes Lehmeyer Chair of Applied Physics Timon Citak Lehrstuhl für Experimentalphysik (Optik) Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

Additional Organisation(s)

FAU Profilzentrum Licht.Materie.Quantentechnologien (FAU LMQ)

How to cite

APA:

Lehmeyer, J., Citak, T., Weber, H.B., & Krieger, M. (2023). Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques. Electronics Letters. https://dx.doi.org/10.1049/ell2.12752

MLA:

Lehmeyer, Johannes, et al. "Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques." Electronics Letters (2023).

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