A new generation of high voltage MOSFETs breaks the limit line of silicon

Deboy G, März M, Stengl JP, Strack H, Tihanyi J, Weber H (1998)

Publication Type: Conference contribution

Publication year: 1998

Publisher: IEEE

City/Town: NEW YORK

Pages Range: 683-685

Conference Proceedings Title: INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST

Event location: SAN FRANCISCO, CA US

Authors with CRIS profile

Martin März

Involved external institutions

Siemens AG DE Germany (DE)

How to cite

APA:

Deboy, G., März, M., Stengl, J.P., Strack, H., Tihanyi, J., & Weber, H. (1998). A new generation of high voltage MOSFETs breaks the limit line of silicon. In INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST (pp. 683-685). SAN FRANCISCO, CA, US: NEW YORK: IEEE.

MLA:

Deboy, G., et al. "A new generation of high voltage MOSFETs breaks the limit line of silicon." Proceedings of the International Electron Devices Meeting (IEDM), SAN FRANCISCO, CA NEW YORK: IEEE, 1998. 683-685.

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