Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices

Kodolitsch E, Sodan V, Krieger M, Weber HB, Tsavdaris N (2022)

Publication Type: Journal article, Letter

Publication year: 2022

Journal

Materials Research Express IOP Publishing

Book Volume: 9

Article Number: 125901

Journal Issue: 12

DOI: 10.1088/2053-1591/acaa1f

Open Access Link: https://dx.doi.org/10.1088/2053-1591/acaa1f

Abstract

In this study, we report the impact of structural 4H-SiC epitaxial defects on the electrical characteristics and blocking capabilities of SiC power devices. The detection and classification of the various crystal defects existing in 4H-SiC epitaxial layers and substrates was carried out with a commercial inspection tool using an optical microscope with a photoluminescence channel (PL). After the fabrication of dedicated test structures, devices that contain a single crystal defect were selected and electrically tested in reverse bias mode. Photon emission microscopy was performed to enable the localization of the leakage current spots within the devices. Thus, a direct correlation of the various crystal defects with the reduced blocking capability mechanism was made. This evaluation helps to set directions and build a strategy towards the reduction of critical defects in order to improve the performance of SiC devices for high power applications.

Authors with CRIS profile

Elisabeth Kodolitsch Chair of Applied Physics Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Involved external institutions

Infineon Technologies Austria AG AT Austria (AT)

How to cite

APA:

Kodolitsch, E., Sodan, V., Krieger, M., Weber, H.B., & Tsavdaris, N. (2022). Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices. Materials Research Express, 9(12). https://dx.doi.org/10.1088/2053-1591/acaa1f

MLA:

Kodolitsch, Elisabeth, et al. "Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices." Materials Research Express 9.12 (2022).

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