High-Voltage CMOS RF Switch with Active Biasing

Solomko V, Syroiezhin S, Tayari D, Essel J, Weigel R (2022)

Publication Type: Conference contribution

Publication year: 2022

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 297-300

Conference Proceedings Title: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings

Event location: Milan, ITA

ISBN: 9781665484947

DOI: 10.1109/ESSCIRC55480.2022.9911399

Abstract

In this paper a stacked MOSFET (metal-oxide-semiconductor field effect transistor)-based RF (radio-frequency) switch comprising an active biasing circuit is demonstrated. The active biasing circuit regulates the DC voltage at the source-drain nodes of the stack, thus compensating for the self-biasing effect when the switch is exposed to a high-power RF signal. Such operating point regulation improves the robustness of the OFF-state switch against the applied RF voltage. Two high-voltage RF switches - a reference one with the passive resistive bias network and the proposed one comprising the active biasing - have been designed and implemented in a dedicated 130 nm bulk-CMOS (Complementary Metal-Oxide-Semiconductor) RF switch technology. The device with the active biasing circuit has demonstrated 6 V higher RF breakdown voltage comparing to the reference switch (62 V versus 56 V respectively). All other relevant RF parameters of the switch remain unchanged.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE) eesy-ic GmbH DE Germany (DE)

How to cite

APA:

Solomko, V., Syroiezhin, S., Tayari, D., Essel, J., & Weigel, R. (2022). High-Voltage CMOS RF Switch with Active Biasing. In ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings (pp. 297-300). Milan, ITA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Solomko, Valentyn, et al. "High-Voltage CMOS RF Switch with Active Biasing." Proceedings of the 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, Milan, ITA Institute of Electrical and Electronics Engineers Inc., 2022. 297-300.

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