Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes
Hofmann G, Höpfner J, Schilling M, Muhin A, Romer F, Wernicke T, Kneissl M, Witzigmann B (2022)
Publication Type: Conference contribution
Publication year: 2022
Publisher: IEEE Computer Society
Book Volume: 2022-September
Pages Range: 79-80
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Turin
ISBN: 9781665478991
DOI: 10.1109/NUSOD54938.2022.9894749
Abstract
Deep ultraviolet (DUV) light emitting diodes (LEDs) and lasers are enabled by high band gap Aluminium Gallium Nitride (AlGaN). The efficiency of recent multi quantum well (MQW) DUV emitters is still in the percent range which can be in part attributed to the hole injection. The hole injection and the carrier distribution in the high band gap AlGaN active region are not yet well understood. To support the experimental investigation of the current injection and distribution we have performed numerical simulations of a mixed MQW DUV LED series emitting at 233nm and 250 nm. We demonstrate that particularly the emission of the 233nm quantum well is very sensitive to the AlGaN material properties and inhomogeneous broadening. The numerical modelling enables a better interpretation of experimental data.
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Germany (DE)How to cite
APA:
Hofmann, G., Höpfner, J., Schilling, M., Muhin, A., Romer, F., Wernicke, T.,... Witzigmann, B. (2022). Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 79-80). Turin, IT: IEEE Computer Society.
MLA:
Hofmann, Gregor, et al. "Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes." Proceedings of the 2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022, Turin IEEE Computer Society, 2022. 79-80.
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