Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Romanyuk O, Paszuk A, Gordeev I, Wilks RG, Ueda S, Hartmann C, Félix R, Bär M, Schlueter C, Gloskovskii A, Bartoš I, Nandy M, Houdková J, Jiříček P, Jaegermann W, Hofmann JP, Hannappel T (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Applied Surface Science Elsevier

Book Volume: 605

Article Number: 154630

DOI: 10.1016/j.apsusc.2022.154630

Abstract

The epitaxial growth of the polar GaP(1 0 0) on the nonpolar Si(1 0 0) substrate suffers from inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic steps on the Si(1 0 0) surface. Stabilization of Si(1 0 0) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4–50-nm-thick GaP epitaxial films were grown on As-terminated Si(1 0 0) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy (MOVPE). The GaP(As)/Si(1 0 0) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of As atoms in the GaP lattice (∼0.2–0.3 at.%) and a localization of As atoms at the GaP(As)/Si(1 0 0) interface (∼1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5 and 0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the GaP(As)/Si(1 0 0) heterostructure was deduced.

Authors with CRIS profile

Marcus Bär Professur für Röntgenspektroskopie (HIERN)

Involved external institutions

Technische Universität Darmstadt DE Germany (DE) Technische Universität Ilmenau DE Germany (DE) Academy of Sciences of the Czech Republic (ASCR) / Akademie věd České republiky (AVČR) CZ Czech Republic (CZ) Deutsches Elektronen-Synchrotron DESY DE Germany (DE) Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE) National Institute of Materials Science (NIMS) JP Japan (JP)

How to cite

APA:

Romanyuk, O., Paszuk, A., Gordeev, I., Wilks, R.G., Ueda, S., Hartmann, C.,... Hannappel, T. (2022). Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams. Applied Surface Science, 605. https://dx.doi.org/10.1016/j.apsusc.2022.154630

MLA:

Romanyuk, O., et al. "Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams." Applied Surface Science 605 (2022).

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