Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps
Bickermann M, Schimmel S, Epelbaum B, Filip O, Heimann P, Nagata S, Winnacker A (2011)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Journal
Book Volume: 8
Pages Range: 2235–2238
Journal Issue: 7-8
Abstract
Structural defects in aluminium nitride (AlN) get visible in panchromatic cathodoluminescence (CL) maps as luminescence at 340 nm and 630 nm is locally enhanced. Low-angle grain boundaries (LAGBs) and dislocations can be detected as long as they are sufficiently decorated and the defect-related contrast is higher than local variations in background CL intensity. We applied the method to c-plane and a-plane cuts of one of our off-oriented grown AlN crystals and describe occurrence, routes, and dissolution into dislocation bunches of LAGBs. We found that the vast majority of LAGBs are uneven a-planes which extend in a preferential m-as well as in c-direction. As a consequence, their density decreases only slightly during growth. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Saskia Schimmel
Lehrstuhl für Elektronische Bauelemente
Albrecht Winnacker
Technische Fakultät
Involved external institutions
Japan (JP)How to cite
APA:
Bickermann, M., Schimmel, S., Epelbaum, B., Filip, O., Heimann, P., Nagata, S., & Winnacker, A. (2011). Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2235–2238. https://dx.doi.org/10.1002/pssc.201000864
MLA:
Bickermann, Matthias, et al. "Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps." Physica Status Solidi (C) Current Topics in Solid State Physics 8.7-8 (2011): 2235–2238.
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