Design of two Low DC-Power High-Efficiency D-Band Power Amplifiers in 22 nm FDSOI

Engelmann A, Hetterle P, Probst F, Weigel R, Dietz M (2022)

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2022

Publisher: IEEE

Pages Range: 212-215

Conference Proceedings Title: 17th European Microwave Integrated Circuits Conference (EuMIC)

Event location: Mailand

DOI: 10.23919/EuMIC54520.2022.9923463

Abstract

This paper presents two low DC-power D-band power amplifiers (PAs) integrated into a 22nm fully-depleted
silicon-on-insulator (FDSOI) technology. Both amplifiers use the capacitive neutralization technique for gain-boosting and stability enhancement. The design procedure for transformer-based (TB) and line-based (LB) matching networks and the advantages and disadvantages of both architectures are discussed. The PA implementation focuses on low DC-power consumption, high efficiency, and compact device realization. The fabricated TBand LB-PA show high maximum power-added-efficiency (PAE) of 9 and 8% consuming 46 and 52mW respectively at a supply voltage of only 0.8V. The saturated output powers Psat reach 6.8dBm and 6.5dBm while achieving small-signal gains of 24.2 and 23.4 dB with 3-dB-bandwidths of 23 and 26 GHz.

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How to cite

APA:

Engelmann, A., Hetterle, P., Probst, F., Weigel, R., & Dietz, M. (2022). Design of two Low DC-Power High-Efficiency D-Band Power Amplifiers in 22 nm FDSOI. In 17th European Microwave Integrated Circuits Conference (EuMIC) (pp. 212-215). Mailand, IT: IEEE.

MLA:

Engelmann, Andre, et al. "Design of two Low DC-Power High-Efficiency D-Band Power Amplifiers in 22 nm FDSOI." Proceedings of the European Microwave Integrated Circuits Conference 2022 (EuMIC), Mailand IEEE, 2022. 212-215.

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