High temperature oxidation resistance of physical vapor deposited Hf-Si-B-2 +/- z thin films

Glechner T, Bahr A, Hahn R, Wojcik T, Heller M, Kirnbauer A, Ramm J, Kolozsvari S, Felfer P, Riedl H (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Corrosion Science Elsevier

Book Volume: 205

DOI: 10.1016/j.corsci.2022.110413

Abstract

Within physical vapor deposited Hf-Si-B-2 +/- z thin films, selective diffusion-driven oxidation of Si is identified to cause outstanding oxidation resistance at temperatures up to 1500 degrees C. After 60 h at 1200 degrees C, the initially 2.47 mu m thin Hf0.20Si0.23B0.57 thin film exhibits a dense oxide scale of only 1.56 mu m. The thermally induced decomposition of metastable Hf-Si-B-2 +/- z leads not only to the formation of Si precipitates within the remaining thin film (related to a non-homogenous Si distribution after the deposition) but also to pure Si layers on top and bottom of the Hf-Si-B-2 +/- z coatings next to the excellent adherend SiO2 based scales.

Authors with CRIS profile

Martina Heller Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften) Peter Felfer Professur für Atom Probe Tomography

Involved external institutions

Technische Universität Wien / Vienna University of Technology AT Austria (AT) Oerlikon Balzers Coating Germany GmbH DE Germany (DE) Plansee Composite Materials GmbH DE Germany (DE)

How to cite

APA:

Glechner, T., Bahr, A., Hahn, R., Wojcik, T., Heller, M., Kirnbauer, A.,... Riedl, H. (2022). High temperature oxidation resistance of physical vapor deposited Hf-Si-B-2 +/- z thin films. Corrosion Science, 205. https://dx.doi.org/10.1016/j.corsci.2022.110413

MLA:

Glechner, T., et al. "High temperature oxidation resistance of physical vapor deposited Hf-Si-B-2 +/- z thin films." Corrosion Science 205 (2022).

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