Threshold Dynamics of a Semiconductor Single Atom Maser

Liu YY, Stehlik J, Eichler C, Mi X, Hartke TR, Gullans MJ, Taylor JM, Petta JR (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Physical Review Letters American Physical Society

Book Volume: 119

Article Number: 097702

Journal Issue: 9

DOI: 10.1103/PhysRevLett.119.097702

Abstract

We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.

Authors with CRIS profile

Christopher Eichler

Involved external institutions

National Institute of Standards and Technology (NIST) US United States (USA) (US) Princeton University US United States (USA) (US)

How to cite

APA:

Liu, Y.-Y., Stehlik, J., Eichler, C., Mi, X., Hartke, T.R., Gullans, M.J.,... Petta, J.R. (2017). Threshold Dynamics of a Semiconductor Single Atom Maser. Physical Review Letters, 119(9). https://dx.doi.org/10.1103/PhysRevLett.119.097702

MLA:

Liu, Y. -Y., et al. "Threshold Dynamics of a Semiconductor Single Atom Maser." Physical Review Letters 119.9 (2017).

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