Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line

Solomko V, Özdamar O, Weigel R, Hagelauer A (2021)

Publication Type: Conference contribution

Publication year: 2021

Publisher: IEEE

City/Town: NEW YORK

Pages Range: 207-210

Conference Proceedings Title: IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021)

Event location: , ELECTR NETWORK

DOI: 10.1109/ESSDERC53440.2021.9631806

Authors with CRIS profile

Oguzhan Özdamar Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Amelie Marietta Hagelauer

Involved external institutions

Infineon Technologies AG DE Germany (DE) Universität Bayreuth DE Germany (DE)

How to cite

APA:

Solomko, V., Özdamar, O., Weigel, R., & Hagelauer, A. (2021). Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line. In IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) (pp. 207-210). , ELECTR NETWORK: NEW YORK: IEEE.

MLA:

Solomko, Valentyn, et al. "Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line." Proceedings of the IEEE 51st European Solid-State Device Research Conference (ESSDERC), , ELECTR NETWORK NEW YORK: IEEE, 2021. 207-210.

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