Comparison between forced ccm and dcm on low load efficiency of a sic based dc/dc converter
Hörauf P, Endruschat A, März M (2021)
Publication Type: Conference contribution
Publication year: 2021
Publisher: Mesago PCIM GmbH
Book Volume: 2021-May
Pages Range: 556-562
Conference Proceedings Title: PCIM Europe Conference Proceedings
Event location: Virtual, Online
ISBN: 9783800755158
Abstract
The internal body diode of Silicon Carbide (SiC)-MOSFETs shows a small reverse recovery charge but a large forward voltage drop. In a converter that operates in continuous-conduction-mode (CCM) with synchronous rectification, the losses due to this forward voltage drop are neglectable. To maintain high efficiency under light-load in discontinuous-conduction mode (DCM) either an external SiC Schottky-Barrier-Diode (SBD) in parallel to the body diode or small phase currents are required. Both result in low rectifying losses. In this work an option to operate a SBD-less SiC-based half bridge buck/boost converter in light-load but also with high efficiency is examined. It is tested in a high power density (7.5 kW/kg) buck/boost converter.
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Germany (DE)How to cite
APA:
Hörauf, P., Endruschat, A., & März, M. (2021). Comparison between forced ccm and dcm on low load efficiency of a sic based dc/dc converter. In PCIM Europe Conference Proceedings (pp. 556-562). Virtual, Online: Mesago PCIM GmbH.
MLA:
Hörauf, Philipp, Achim Endruschat, and Martin März. "Comparison between forced ccm and dcm on low load efficiency of a sic based dc/dc converter." Proceedings of the 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021, Virtual, Online Mesago PCIM GmbH, 2021. 556-562.
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