Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface

Krieger M, Weber HB (2021)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2021

Publisher: Wiley VCH

Edited Volumes: Wide Bandgap Semiconductors for Power Electronics

City/Town: Weinheim

Pages Range: 249 - 270

ISBN: 978-3-527-34671-4

DOI: 10.1002/9783527824724.ch10

Abstract

In order to access semiconductor functionality, the metallic contact is a key issue. Silicon carbide (SiC) is unique, because it inherently provides a monolithic metallic contact with unprecedented properties: epitaxial graphene that can be grown out of its (0001) facet. It is an atomically thin metal that is ultrarobust and nearly fully transparent. The contact is atomically at, epitaxially defined and can be tailored to be either ohmic or of Schottky type. This chapter first describes fabrication and processing as well as structural and electronic properties of epitaxial graphene contacts to SiC. Then, unique properties of this combined material system are presented that include a local definition of the charge carrier type in graphene and a concept that employs this for fully functional analog and digital electronics. Moreover, this monolithic material allows unprecedented insight into the speed limits of Schottky rectification. Finally, epitaxial graphene/SiC contacts open up opportunities in the realm of quantum technology. As transparent electrodes they can be used for Stark tuning and spectral matching of luminescent point defects in SiC, a prerequisite for truly indistinguishable quantum systems.

Authors with CRIS profile

Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Related research project(s)

Monolithic electronic circuits based on epitaxial graphene Dec. 1, 2013 - Dec. 1, 2016 Graphene and Organic Molecules: Transport Experiments (B08) (SFB 953) SFB 953: Synthetic Carbon Allotropes (SFB 953) Jan. 1, 2012 - Jan. 1, 2015

How to cite

APA:

Krieger, M., & Weber, H.B. (2021). Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface. In Peter Wellmann, Noboru Ohtani, Roland Rupp (Eds.), Wide Bandgap Semiconductors for Power Electronics. (pp. 249 - 270). Weinheim: Wiley VCH.

MLA:

Krieger, Michael, and Heiko B. Weber. "Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface." Wide Bandgap Semiconductors for Power Electronics. Ed. Peter Wellmann, Noboru Ohtani, Roland Rupp, Weinheim: Wiley VCH, 2021. 249 - 270.

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