Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger D, Kahmen G, Weigel R (2021)

Publication Type: Journal article

Publication year: 2021

Journal

IEEE Transactions on Microwave Theory and Techniques Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/TMTT.2021.3095235

Abstract

This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxide-semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Universität Ulm DE Germany (DE) Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE)

How to cite

APA:

Kissinger, D., Kahmen, G., & Weigel, R. (2021). Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies. IEEE Transactions on Microwave Theory and Techniques. https://dx.doi.org/10.1109/TMTT.2021.3095235

MLA:

Kissinger, Dietmar, Gerhard Kahmen, and Robert Weigel. "Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies." IEEE Transactions on Microwave Theory and Techniques (2021).

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