Comprehensive Raman study of orthorhombic kappa/epsilon-Ga2O3 and the impact of rotational domains
Janzen BM, Mazzolini P, Gillen R, Peltason VFS, Grote LP, Maultzsch J, Fornari R, Bierwagen O, Wagner MR (2021)
Publication Type: Journal article
Publication year: 2021
Journal
DOI: 10.1039/d1tc03500b
Abstract
Gallium oxide (Ga2O3) is an ultra-wide bandgap material, which has recently attracted widespread attention for holding promising applications in power electronics and solar blind UV photodetectors, outclassing GaN or SiC in terms of a larger bandgap and higher breakdown voltages. The orthorhombic kappa phase (also referred to as epsilon) has sparked particular interest for offering higher symmetry than beta, while featuring ferroelectric behavior paired with a large predicted spontaneous polarization, paving the way to fabricating high-quality two-dimensional electron gases for application in heterostructure field effect transistors. The presently available kappa phase samples are characterized by a domain structure, in which orthorhombic domains are rotated 120 degrees against each other within the c-plane forming a pseudo-hexagonal structure, which has previously often been ascribed to epsilon-Ga2O3 and incorrectly been viewed as this polymorph's true crystal structure. A detailed investigation into the phonon modes of orthorhombic kappa-Ga2O3 provides insights into fundamental material properties such as crystal structure and orientation as well as the vibrational symmetries of Raman active modes. We investigate the Raman active phonon modes of an MBE-grown orthorhombic kappa-Ga2O3 thin film featuring the domain structure deposited on (0001)-Al2O3 by experiment and theory: Polarized micro-Raman spectroscopy measurements in conjunction with density functional perturbation theory (DFPT) calculations enable the identification of both the frequencies and vibrational symmetries of the Raman active phonons. Presenting comprehensive Raman spectra of the orthorhombic kappa phase, the experimental frequencies of more than 90 Raman modes are determined and correlated with the 117 modes predicted by the calculations. Angular-resolved Raman measurements are utilized to provide an experimental verification of phonon mode symmetries. We present an analytical tool to deal with the domain structure and its effect on the obtained Raman spectra.
Authors with CRIS profile
Involved external institutions
Technische Universität Berlin
Germany (DE)
University of Parma / Università degli Studi di Parma
Italy (IT)
Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Germany (DE)
Germany (DE)
University of Parma / Università degli Studi di Parma
Italy (IT)
Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.
Germany (DE)
How to cite
APA:
Janzen, B.M., Mazzolini, P., Gillen, R., Peltason, V.F.S., Grote, L.P., Maultzsch, J.,... Wagner, M.R. (2021). Comprehensive Raman study of orthorhombic kappa/epsilon-Ga2O3 and the impact of rotational domains. Journal of Materials Chemistry C. https://doi.org/10.1039/d1tc03500b
MLA:
Janzen, Benjamin M., et al. "Comprehensive Raman study of orthorhombic kappa/epsilon-Ga2O3 and the impact of rotational domains." Journal of Materials Chemistry C (2021).
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