Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors
Solomko V, Özdamar O, Weigel R, Hagelauer A (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 2
Pages Range: 375-384
Article Number: 9367280
DOI: 10.1109/OJAP.2021.3063528
Abstract
A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.
Authors with CRIS profile
Oguzhan Özdamar
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Amelie Marietta Hagelauer
Involved external institutions
Germany (DE)How to cite
APA:
Solomko, V., Özdamar, O., Weigel, R., & Hagelauer, A. (2021). Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors. IEEE Open Journal of Antennas and Propagation, 2, 375-384. https://dx.doi.org/10.1109/OJAP.2021.3063528
MLA:
Solomko, Valentyn, et al. "Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors." IEEE Open Journal of Antennas and Propagation 2 (2021): 375-384.
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