Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities

Rickert L, Fritsch B, Kors A, Reithmaier JP, Benyoucef M (2020)


Publication Language: English

Publication Type: Journal article

Publication year: 2020

Journal

Book Volume: 31

Article Number: 315703

Journal Issue: 31

URI: https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c

DOI: 10.1088/1361-6528/ab8a8c

Open Access Link: https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c

Abstract

We present finite-difference time domain simulations and optical characterizations via micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 106, while the M1 mode volume is found to be 0.33 × (λ/n)3, which is less than half the value of the M1 mode volume of a comparable L3 cavity. Low-temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values on the order of 104 with emission wavelengths around 1.55 μm. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature-tuning experiments.

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How to cite

APA:

Rickert, L., Fritsch, B., Kors, A., Reithmaier, J.P., & Benyoucef, M. (2020). Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities. Nanotechnology, 31(31). https://dx.doi.org/10.1088/1361-6528/ab8a8c

MLA:

Rickert, Lucas, et al. "Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities." Nanotechnology 31.31 (2020).

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