Absorption loss influence on optical characteristics of multilayer distributed Bragg reflector: Wavelength-scale analysis by the method of single expression
Baghdasaryan HV, Knyazyan TM, Baghdasaryan TH, Witzigmann B, Roemer F (2010)
Publication Type: Journal article
Publication year: 2010
Journal
Book Volume: 18
Pages Range: 438-445
Journal Issue: 4
DOI: 10.2478/s11772-010-0049-0
Abstract
Electrodynamical model of a classical distributed Bragg reflector (DBR) consisting of alternating quarter-wave layers of high and low permittivity is considered at the plane wave normal incidence. Reflective characteristics of DBR possessing absorption loss in constituting layers are analysed via correct wavelength-scale boundary problem solution by the method of single expression (MSE). Analysis of optical field and power flow density distributions within the lossy DBR structures explained the peculiarities of their reflective characteristics. Optimal configurations of lossless and lossy DBRs are revealed. Specific DBR structures possessing full transparency at definite number of layers are also analysed. © 2010 Versita Warsaw and Springer-Verlag Wien.
Authors with CRIS profile
Involved external institutions
State Engineering University of Armenia (SEUA)
Armenia (AM)
Yerevan State University / Երեվանի Պետական Համալսարան (YSU)
Armenia (AM)
Universität Kassel
Germany (DE)
Armenia (AM)
Yerevan State University / Երեվանի Պետական Համալսարան (YSU)
Armenia (AM)
Universität Kassel
Germany (DE)
How to cite
APA:
Baghdasaryan, H.V., Knyazyan, T.M., Baghdasaryan, T.H., Witzigmann, B., & Roemer, F. (2010). Absorption loss influence on optical characteristics of multilayer distributed Bragg reflector: Wavelength-scale analysis by the method of single expression. Opto-Electronics Review, 18(4), 438-445. https://dx.doi.org/10.2478/s11772-010-0049-0
MLA:
Baghdasaryan, H. V., et al. "Absorption loss influence on optical characteristics of multilayer distributed Bragg reflector: Wavelength-scale analysis by the method of single expression." Opto-Electronics Review 18.4 (2010): 438-445.
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