Optical anisotropy in semipolar (Al,In)GaN laser waveguides

Scheibenzuber W, Schwarz U, Veprek R, Witzigmann B, Hangleiter A (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Physica Status Solidi (C) Current Topics in Solid State Physics Wiley - V C H Verlag GmbbH & Co.

Book Volume: 7

Pages Range: 1925-1927

Journal Issue: 7-8

DOI: 10.1002/pssc.200983646

Abstract

In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one-dimensional 4x4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c-axis, the eigenmodes show TE/TM- or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Technische Universität Braunschweig DE Germany (DE) Universität Regensburg DE Germany (DE) Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich CH Switzerland (CH)

How to cite

APA:

Scheibenzuber, W., Schwarz, U., Veprek, R., Witzigmann, B., & Hangleiter, A. (2010). Optical anisotropy in semipolar (Al,In)GaN laser waveguides. Physica Status Solidi (C) Current Topics in Solid State Physics, 7(7-8), 1925-1927. https://dx.doi.org/10.1002/pssc.200983646

MLA:

Scheibenzuber, W., et al. "Optical anisotropy in semipolar (Al,In)GaN laser waveguides." Physica Status Solidi (C) Current Topics in Solid State Physics 7.7-8 (2010): 1925-1927.

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