Optical properties of individual GaN nanorods for light emitting diodes: Influence of geometry, materials, and facets
Koelper C, Sabathil M, Witzigmann B, Roemer F, Bergbauer W, Strassburg M (2011)
Publication Type: Conference contribution
Publication year: 2011
Journal
Book Volume: 7933
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: USA
ISBN: 9780819484703
DOI: 10.1117/12.874984
Abstract
We present a systematic analysis of the optical properties of GaN nanorods (NRs) for the application in Light Emitting Diodes (LEDs). Our focus is on NR emitters incorporating active layers in the form of quantum-disc or core-shell geometries. We concentrate on the properties of individual NRs, neglecting any coupling with neighbouring NRs or ensemble effects. The distribution of power among guided and radiative modes as well as Purcell enhancement is discussed in detail in the context of different NR geometries, materials and the presence of interfaces. © 2011 SPIE.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Koelper, C., Sabathil, M., Witzigmann, B., Roemer, F., Bergbauer, W., & Strassburg, M. (2011). Optical properties of individual GaN nanorods for light emitting diodes: Influence of geometry, materials, and facets. In Proceedings of SPIE - The International Society for Optical Engineering. USA.
MLA:
Koelper, C., et al. "Optical properties of individual GaN nanorods for light emitting diodes: Influence of geometry, materials, and facets." Proceedings of the Physics and Simulation of Optoelectronic Devices XIX, USA 2011.
BibTeX: Download