Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter
Dolgos D, Meier H, Schenk A, Witzigmann B (2011)
Publication Type: Journal article
Publication year: 2011
Journal
Book Volume: 110
Article Number: 084507
Journal Issue: 8
DOI: 10.1063/1.3652844
Abstract
The high-energy charge transport of electrons and holes in GaAs single photon avalanche diodes with multiplication region widths of 55 nm to 500 nm is investigated by means of the full-band Monte Carlo technique incorporating computationally efficient full-band phonon scattering rates. Compared to previous works, the solution of the Boltzmann transport equation and the incorporation of the full-band structure put the evaluation of the breakdown probability, the time to avalanche breakdown, and the jitter on deeper theoretical grounds. As a main result, the breakdown probability exhibits a steeper rise versus reverse bias for smaller multiplicator sizes. The time to avalanche breakdown and jitter decrease for smaller multiplicator widths. © 2011 American Institute of Physics.
Authors with CRIS profile
Involved external institutions
Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich
Switzerland (CH)
Universität Kassel
Germany (DE)
Switzerland (CH)
Universität Kassel
Germany (DE)
How to cite
APA:
Dolgos, D., Meier, H., Schenk, A., & Witzigmann, B. (2011). Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter. Journal of Applied Physics, 110(8). https://dx.doi.org/10.1063/1.3652844
MLA:
Dolgos, Denis, et al. "Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter." Journal of Applied Physics 110.8 (2011).
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