Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

Deppner M, Römer F, Witzigmann B, Ledig J, Neumann R, Waag A, Bergbauer W, Strassburg M (2011)

Publication Type: Conference contribution

Publication year: 2011

Conference Proceedings Title: IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Event location: DEU

ISBN: 9781457704291

DOI: 10.1109/SCD.2011.6068745

Abstract

We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characteristics of the three crystal orientations can be examined, arising from polarization effects as well as the strain-induced bandedge shift. Furthermore the influence of carrier injection efficiency in a nanowire is investigated. © 2011 IEEE.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Universität Kassel DE Germany (DE) Technische Universität Braunschweig DE Germany (DE) Osram Opto Semiconductors GmbH DE Germany (DE)

How to cite

APA:

Deppner, M., Römer, F., Witzigmann, B., Ledig, J., Neumann, R., Waag, A.,... Strassburg, M. (2011). Computational study of carrier injection in III-nitride core-shell nanowire-LEDs. In IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition. DEU.

MLA:

Deppner, Marcus, et al. "Computational study of carrier injection in III-nitride core-shell nanowire-LEDs." Proceedings of the 2011 IEEE Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011, DEU 2011.

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