Simulation of InGaN quantum well LEDs with reduced internal polarization
Andreev Z, Roemer F, Witzigmann B (2012)
Publication Type: Journal article
Publication year: 2012
Journal
Book Volume: 209
Pages Range: 487-490
Journal Issue: 3
Abstract
This work presents a theoretical comparison of efficiency in III-nitride light emitting diodes (LEDs). We simulate non-, semi-, and polar devices, and analyze their I-V characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structural design for nitride devices, with decreased polarization charges, using quaternary AlInGaN material. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Germany (DE)How to cite
APA:
Andreev, Z., Roemer, F., & Witzigmann, B. (2012). Simulation of InGaN quantum well LEDs with reduced internal polarization. physica status solidi (a), 209(3), 487-490. https://dx.doi.org/10.1002/pssa.201100377
MLA:
Andreev, Zhelio, Friedhard Roemer, and Bernd Witzigmann. "Simulation of InGaN quantum well LEDs with reduced internal polarization." physica status solidi (a) 209.3 (2012): 487-490.
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