Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs

Dolgos D, Schenk A, Witzigmann B (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 111

Article Number: 073714

Journal Issue: 7

DOI: 10.1063/1.3699313

Abstract

The inclusion of momentum conservation and the evaluation of the double Coulomb transition matrix elements render the calculation of the impact ionization scattering rates with first principle approaches computationally expensive and their numerical implementation laborious. Despite the positive assessment of Kane's random-k approximation, the impact ionization rates and the secondary carrier energies for the III-V semiconductors GaAs, InP, In 0.52Al 0.48As, and In 0.53Ga 0.47As have not been provided to the charge transport modeling community in terms of analytical fit functions yet. We provide the impact ionization scattering rates as modified Keldysh formulas and the secondary carrier energies as straight line fits. The band structure computation is based on the empirical pseudopotential method. © 2012 American Institute of Physics.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich CH Switzerland (CH) Universität Kassel DE Germany (DE)

How to cite

APA:

Dolgos, D., Schenk, A., & Witzigmann, B. (2012). Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs. Journal of Applied Physics, 111(7). https://dx.doi.org/10.1063/1.3699313

MLA:

Dolgos, Denis, Andreas Schenk, and Bernd Witzigmann. "Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs." Journal of Applied Physics 111.7 (2012).

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