All-InGaN phosphorless white light emitting diodes: An efficiency estimation
Koelper C, Sabathil M, Mandl M, Strassburg M, Witzigmann B (2012)
Publication Type: Journal article
Publication year: 2012
Journal
Book Volume: 30
Pages Range: 2853-2862
Article Number: 6227320
Journal Issue: 17
Abstract
In this theoretical study we investigate the efficiency potential of monolithic white light emitting diodes (LEDs) that are free of wavelength-converting phosphors and are based solely on the InGaN material system. For that purpose we develop a numerical model that handles multiple active layers of different emission wavelength and takes photon reabsorption and-emission as well as internal non-radiative and optical losses into account. It is applied both to thin film structures as well as novel nanorod LEDs featuring disc-like active layers. In both cases, the active layers may either consist of multiple thin quantum wells or a single thick, bulk-like InGaN layer. © 2012 IEEE.
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Germany (DE)How to cite
APA:
Koelper, C., Sabathil, M., Mandl, M., Strassburg, M., & Witzigmann, B. (2012). All-InGaN phosphorless white light emitting diodes: An efficiency estimation. Journal of Lightwave Technology, 30(17), 2853-2862. https://dx.doi.org/10.1109/JLT.2012.2206561
MLA:
Koelper, Christopher, et al. "All-InGaN phosphorless white light emitting diodes: An efficiency estimation." Journal of Lightwave Technology 30.17 (2012): 2853-2862.
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