Auger carrier leakage in III-nitride quantum-well light emitting diodes
Deppner M, Roemer F, Witzigmann B (2012)
Publication Type: Journal article
Publication year: 2012
Journal
Book Volume: 6
Pages Range: 418-420
Journal Issue: 11
Abstract
Auger induced leakage is shown to be a contributing factor for the internal quantum efficiency (IQE) droop in III-nitride quantum-well light emitting diodes (LEDs). The mechanism is based on leakage current from carrier spill-out of the well originating from energy transfer during Auger recombination. Adding this leakage reduces the Auger coefficient by 50% when compared to a standard Auger model with cubic density dependence. As reference, experimental data of a green quantum-well LED are taken. Direct leakage due to non-ideal carrier capture and re-emission out of the well affects the IQE at current densities much larger than the maximum IQE point. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Germany (DE)How to cite
APA:
Deppner, M., Roemer, F., & Witzigmann, B. (2012). Auger carrier leakage in III-nitride quantum-well light emitting diodes. Physica Status Solidi-Rapid Research Letters, 6(11), 418-420. https://dx.doi.org/10.1002/pssr.201206367
MLA:
Deppner, Marcus, Friedhard Roemer, and Bernd Witzigmann. "Auger carrier leakage in III-nitride quantum-well light emitting diodes." Physica Status Solidi-Rapid Research Letters 6.11 (2012): 418-420.
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