Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

Dadgar A, Groh L, Metzner S, Neugebauer S, Blaesing J, Hempel T, Bertram F, Christen J, Krost A, Andreev Z, Witzigmann B (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 102

Article Number: 062110

Journal Issue: 6

DOI: 10.1063/1.4793185

Abstract

We report on an over 50% reduction in polarization field strength in c-axis oriented InGaN multi-quantum wells (MQW) by applying quaternary AlGaInN barrier layers with better polarization matching to InGaN than GaN barriers. With the reduction in polarization fields, a strong blue-shift in photoluminescence is observed in agreement with theoretical expectation and simulations. By gracing incidence x-ray diffraction measurements, we demonstrate that partial relaxation already occurs for GaN/InGaN MQWs. As a consequence, the requirement of higher In-content layers for green light emission is in conflict with increasing strain leading to lattice relaxation. © 2013 American Institute of Physics.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Otto-von-Guericke-Universität Magdeburg DE Germany (DE) Universität Kassel DE Germany (DE)

How to cite

APA:

Dadgar, A., Groh, L., Metzner, S., Neugebauer, S., Blaesing, J., Hempel, T.,... Witzigmann, B. (2013). Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers. Applied Physics Letters, 102(6). https://dx.doi.org/10.1063/1.4793185

MLA:

Dadgar, Armin, et al. "Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers." Applied Physics Letters 102.6 (2013).

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