Computational modelling of surface effects in InGaN/GaN quantum disk nano wire LEDs
Roemer F, Witzigmann B (2013)
Publication Type: Conference contribution
Publication year: 2013
Journal
Book Volume: 8619
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: USA
ISBN: 9780819493880
DOI: 10.1117/12.2006182
Abstract
One focus of the current research on light emitting diodes (LEDs) for lighting are nano structured devices which are expected to improve the efficiency and reduce the production costs. Structuring on the sub-micrometer scale increases the surface area with respect to the active volume so that surface effects have a large impact on the device performance. The physics of these devices is not fully transparent to characterization making an experimental analysis tedious. In this work we demonstrate the computational modelling of nano structured LEDs to complement the experiment. The implementation of the simulation model considers surface effects using a numerically accurate true area box method discretization. The derived surface models are applied to the self-consistent simulation of nano wire quantum disk light emitting diodes. By the computational study we demonstrate that the surface physical effects are critical for the performance of nano structured optoelectronic devices and that a low efficiency may be fully attributed to surface recombination. © 2013 Copyright SPIE.
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Germany (DE)How to cite
APA:
Roemer, F., & Witzigmann, B. (2013). Computational modelling of surface effects in InGaN/GaN quantum disk nano wire LEDs. In Proceedings of SPIE - The International Society for Optical Engineering. USA.
MLA:
Roemer, Friedhard, and Bernd Witzigmann. "Computational modelling of surface effects in InGaN/GaN quantum disk nano wire LEDs." Proceedings of the Physics and Simulation of Optoelectronic Devices XXI, USA 2013.
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