Full-band Monte Carlo simulation of single photon avalanche diodes
Dolgos D, Meier H, Schenk A, Witzigmann B (2013)
Publication Type: Conference contribution
Publication year: 2013
Pages Range: 360-361
Conference Proceedings Title: 2013 IEEE Photonics Conference, IPC 2013
ISBN: 9781457715075
DOI: 10.1109/IPCon.2013.6656586
Abstract
Single photon avalanche diodes (SPADs) enable a variety of innovative applications in the fields of biology, medicine, and physics. The propagation of single photons with optical fibers requires the usage of telecommunication wavelengths in the near infrared (NIR) spectral range. NIR SPADs, which can be employed for this application, consist of an absorber layer (In 0.53Ga0.47As) and a multiplication layer (InP or In 0.52Al0.48As). The product of the quantum efficiency ηq, the probability that the photoexcited carrier survives into the multiplier Pc, and the breakdown probability Pb that the carrier activates a self-sustaining avalanche designate the photon detection efficiency [1] PDE = ηqPcPb. The breakdown probability contributes primarily to the electric field dependence of the PDE and increases with the electric field. Therefore, a higher electric field enhances the photon detection efficiency. However, band-to-band or trap-assisted tunneling in the multiplication layer initiate dark counts and degrade the performance of SPAD devices at higher electric fields. Hence, to obtain a higher photon detection efficiency for a given increase of the electric field and tunneling rate, a steep rise of the breakdown probability with applied bias is favorable. The SPAD's timing jitter arises from various sources. The avalanche build-up time is the main contribution to the timing jitter [1]. © 2013 IEEE.
Authors with CRIS profile
Involved external institutions
Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich
Switzerland (CH)
Albis Optoelectronics AG
Switzerland (CH)
Synopsys Switzerland LLC
Switzerland (CH)
Universität Kassel
Germany (DE)
Switzerland (CH)
Albis Optoelectronics AG
Switzerland (CH)
Synopsys Switzerland LLC
Switzerland (CH)
Universität Kassel
Germany (DE)
How to cite
APA:
Dolgos, D., Meier, H., Schenk, A., & Witzigmann, B. (2013). Full-band Monte Carlo simulation of single photon avalanche diodes. In 2013 IEEE Photonics Conference, IPC 2013 (pp. 360-361).
MLA:
Dolgos, Denis, et al. "Full-band Monte Carlo simulation of single photon avalanche diodes." Proceedings of the 2013 26th IEEE Photonics Conference, IPC 2013 2013. 360-361.
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