Simulation of water photo electrolysis with III-nitride semiconductor nano wires
Witzigmann B, Bettenhausen M, Mewes M, Fuele H, Roemer F (2014)
Publication Type: Conference contribution
Publication year: 2014
Journal
Publisher: SPIE
Book Volume: 8980
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: USA
ISBN: 9780819498939
DOI: 10.1117/12.2041230
Abstract
Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency. © 2014 SPIE.
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Germany (DE)How to cite
APA:
Witzigmann, B., Bettenhausen, M., Mewes, M., Fuele, H., & Roemer, F. (2014). Simulation of water photo electrolysis with III-nitride semiconductor nano wires. In Proceedings of SPIE - The International Society for Optical Engineering. USA: SPIE.
MLA:
Witzigmann, Bernd, et al. "Simulation of water photo electrolysis with III-nitride semiconductor nano wires." Proceedings of the Physics and Simulation of Optoelectronic Devices XXII, USA SPIE, 2014.
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