Acceptor impurity activation in III-nitride light emitting diodes
Roemer F, Witzigmann B (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 106
Article Number: 021107
Journal Issue: 2
DOI: 10.1063/1.4905870
Abstract
In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.
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Germany (DE)How to cite
APA:
Roemer, F., & Witzigmann, B. (2015). Acceptor impurity activation in III-nitride light emitting diodes. Applied Physics Letters, 106(2). https://doi.org/10.1063/1.4905870
MLA:
Roemer, Friedhard, and Bernd Witzigmann. "Acceptor impurity activation in III-nitride light emitting diodes." Applied Physics Letters 106.2 (2015).
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