On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

Piprek J, Roemer F, Witzigmann B (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 106

Article Number: 101101

Journal Issue: 10

DOI: 10.1063/1.4914833

Abstract

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination coefficient C is typically obtained from efficiency measurements using mathematical models. However, C coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

NUSOD Institute LLC US United States (USA) (US) Universität Kassel DE Germany (DE)

How to cite

APA:

Piprek, J., Roemer, F., & Witzigmann, B. (2015). On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements. Applied Physics Letters, 106(10). https://dx.doi.org/10.1063/1.4914833

MLA:

Piprek, Joachim, Friedhard Roemer, and Bernd Witzigmann. "On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements." Applied Physics Letters 106.10 (2015).

BibTeX: Download