Effect of doping and impurities on the efficiency of III-nitride light emitting diodes
Römer F, Witzigmann B (2015)
Publication Type: Conference contribution
Publication year: 2015
Publisher: IEEE Computer Society
Book Volume: 2015-May
Pages Range: 3-4
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Taipei
ISBN: 9781479983797
DOI: 10.1109/NUSOD.2015.7292793
Abstract
The doping of GaN based light emitting diodes (LEDs) is critical for achieving a high internal quantum efficiency. The high acceptor activation energy in GaN makes the acceptor doping a challenging task. Moreover, impurities might act as unintentional doping affecting the carrier injection. We analyze doping and impurity effects in III-nitride LEDs by means of physics based simulation. In the view of the high acceptor activation energy an enhanced impurity activation model has been devised integrating the effect of proximate doping sites and the Poole-Frenkel effect. We show by the simulation of a multi quantum well LED how the doping and shallow impurities affect the efficiency.
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Germany (DE)How to cite
APA:
Römer, F., & Witzigmann, B. (2015). Effect of doping and impurities on the efficiency of III-nitride light emitting diodes. In Yuh-Renn Wu, Joachim Piprek (Eds.), Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 3-4). Taipei, TW: IEEE Computer Society.
MLA:
Römer, Friedhard, and Bernd Witzigmann. "Effect of doping and impurities on the efficiency of III-nitride light emitting diodes." Proceedings of the 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015, Taipei Ed. Yuh-Renn Wu, Joachim Piprek, IEEE Computer Society, 2015. 3-4.
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