Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method

Shedbalkar A, Andreev Z, Witzigmann B (2016)


Publication Type: Journal article

Publication year: 2016

Journal

Book Volume: 253

Pages Range: 158-163

Journal Issue: 1

DOI: 10.1002/pssb.201552276

Abstract

This work presents a quantum mechanical simulation of an indium gallium nitride (InGaN) based light-emitting diode (LED) using the non-equilibrium Green's function (NEGF) method. Due to the wurtzite crystal structure, such LEDs exhibit strong polarization-induced electric fields at heterointerfaces. Standard simulation methods based on the drift-diffusion (DD) model do not take into account potentially important transport mechanisms such as quantum mechanical tunneling or non-equilibrium carrier distributions in the device. These effects are included in the NEGF model, while the semi-classical models employ parametrized approximations. In principle, the NEGF simulation therefore allows a more realistic view of the physical process that take place in the LEDs.

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APA:

Shedbalkar, A., Andreev, Z., & Witzigmann, B. (2016). Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method. physica status solidi (b), 253(1), 158-163. https://dx.doi.org/10.1002/pssb.201552276

MLA:

Shedbalkar, Akshay, Zhelio Andreev, and Bernd Witzigmann. "Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method." physica status solidi (b) 253.1 (2016): 158-163.

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