Carrier transport in the multi quantum well region of III-nitride light emitting diodes
Romer F, Witzigmann B (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: IEEE Computer Society
Pages Range: 91-92
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Copenhagen
ISBN: 9781509053230
DOI: 10.1109/NUSOD.2017.8010006
Abstract
The carrier transport in the multi quantum well (MQW) region of Ill-nitride light emitting diodes is critical for their efficiency in the high current regime. The asymmetry of the electron and hole transport makes it difficult to achieve an equal distribution of the quantum well luminescence in order to decrease the droop. To study the luminescence distribution we have devised a carrier transport model accounting for the carrier quantization effects in an MQW active region. The detailed study of the carrier distribution in the MQW is supported by an equivalent circuit model. By means of this model we demonstrate that the re-distribution of the luminescence in the MQW with increasing bias current has an effect on the ideality factor.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Romer, F., & Witzigmann, B. (2017). Carrier transport in the multi quantum well region of III-nitride light emitting diodes. In Morten Willatzen, Joachim Piprek (Eds.), Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 91-92). Copenhagen, DK: IEEE Computer Society.
MLA:
Romer, Friedhard, and Bernd Witzigmann. "Carrier transport in the multi quantum well region of III-nitride light emitting diodes." Proceedings of the 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen Ed. Morten Willatzen, Joachim Piprek, IEEE Computer Society, 2017. 91-92.
BibTeX: Download