Normally off Vertical 3-D GaN Nanowire MOSFETs with Inverted p-GaN Channel

Yu F, Strempel K, Fatahilah MF, Zhou H, Roemer F, Bakin A, Witzigmann B, Schumacher HW, Wasisto HS, Waag A (2018)

Publication Type: Journal article

Publication year: 2018

Journal

IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 65

Pages Range: 2439-2445

Journal Issue: 6

DOI: 10.1109/TED.2018.2824985

Abstract

This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and wet-chemical etching were employed to fabricate the vertically aligned GaN NWs from epitaxial thin films with a specified doping profile. During the wet etching, the influence of p-doping on the NW morphology was investigated, and the results could be explained by the proposed model. In comparison with other c-axis NW transistors, an enhancement-mode (E-mode) operation with a superior threshold voltage ( V-th ) of 2.5 V has been reached in the fabricated GaN MOSFETs. Furthermore, a high driving-current density of 101 kA/cm2 as well as a high ON-/OFF-current ratio of 109 was obtained in the NWs, predicting a potential approach toward future GaN electronics with vertical and smart architecture.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Technische Universität Braunschweig DE Germany (DE) Universität Kassel DE Germany (DE) Physikalisch-Technische Bundesanstalt (PTB) DE Germany (DE)

How to cite

APA:

Yu, F., Strempel, K., Fatahilah, M.F., Zhou, H., Roemer, F., Bakin, A.,... Waag, A. (2018). Normally off Vertical 3-D GaN Nanowire MOSFETs with Inverted p-GaN Channel. IEEE Transactions on Electron Devices, 65(6), 2439-2445. https://dx.doi.org/10.1109/TED.2018.2824985

MLA:

Yu, Feng, et al. "Normally off Vertical 3-D GaN Nanowire MOSFETs with Inverted p-GaN Channel." IEEE Transactions on Electron Devices 65.6 (2018): 2439-2445.

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