Performance analysis and simulation of vertical gallium nitride nanowire transistors
Witzigmann B, Yu F, Frank K, Strempel K, Fatahilah MF, Schumacher HW, Wasisto HS, Roemer F, Waag A (2018)
Publication Type: Journal article
Publication year: 2018
Journal
Book Volume: 144
Pages Range: 73-77
DOI: 10.1016/j.sse.2018.03.005
Abstract
Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device.
Authors with CRIS profile
Involved external institutions
Universität Kassel
Germany (DE)
Technische Universität Braunschweig
Germany (DE)
Physikalisch-Technische Bundesanstalt (PTB)
Germany (DE)
Germany (DE)
Technische Universität Braunschweig
Germany (DE)
Physikalisch-Technische Bundesanstalt (PTB)
Germany (DE)
How to cite
APA:
Witzigmann, B., Yu, F., Frank, K., Strempel, K., Fatahilah, M.F., Schumacher, H.W.,... Waag, A. (2018). Performance analysis and simulation of vertical gallium nitride nanowire transistors. Solid-State Electronics, 144, 73-77. https://dx.doi.org/10.1016/j.sse.2018.03.005
MLA:
Witzigmann, Bernd, et al. "Performance analysis and simulation of vertical gallium nitride nanowire transistors." Solid-State Electronics 144 (2018): 73-77.
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