Electro-Optical Performance of Surface-Emitting Micromirror Superluminescent Diodes
Jentzsch B, Gomez-Iglesias A, Tonkikh A, Niebling T, Witzigmann B (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 13
Article Number: 1900221
Journal Issue: 9
Abstract
Output power characteristics and efficiency of novel surface-emitting superluminescent diodes are presented. Tilted micromirrors terminate an in-plane waveguide, and laterally gain-guided modes are deflected perpendicularly to the anti-reflection-coated chip surface. The epitaxial structures are grown by a metal-organic vapor-phase epitaxy with several InGaAs/GaAs quantum wells emitting at a peak wavelength of 950 nm, and the chip technology involves only wafer-scale processes. The spectral full width at half maximum of the amplified spontaneous emission is larger than 10 nm. In a pulsed operation, a room temperature output power that exceeds 250 mW with a wall-plug efficiency higher than 15% is achieved.
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Germany (DE)How to cite
APA:
Jentzsch, B., Gomez-Iglesias, A., Tonkikh, A., Niebling, T., & Witzigmann, B. (2019). Electro-Optical Performance of Surface-Emitting Micromirror Superluminescent Diodes. Physica Status Solidi-Rapid Research Letters, 13(9). https://dx.doi.org/10.1002/pssr.201900221
MLA:
Jentzsch, Bruno, et al. "Electro-Optical Performance of Surface-Emitting Micromirror Superluminescent Diodes." Physica Status Solidi-Rapid Research Letters 13.9 (2019).
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