InP-basierte weit verstimmbare Quantenpunkt-Laser mit verteilten Rückkopplungsgittern und schmalen Emissionslinienbreiten
Becker A, Bjelica M, Sichkovskyi V, Eyal O, Rippien A, Schnabel F, Baum P, Witzigmann B, Eisenstein G, Reithmaier JP (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: VDE Verlag GmbH
Pages Range: 186-189
Conference Proceedings Title: Photonische Netze - 16. ITG-Fachtagung
Event location: Leipzig
ISBN: 9783800739387
Abstract
For high-capacity coherent optical communication narrow linewidth widely tunable distributed feedback (DFB) lasers as reference lasers are needed. InP-based quantum dot (QD) material developed for 1.55 µm enables tailoring of device properties, like gain, bandwidth and low linewidth enhancement factor (α-factor) that are favorable for such an application. Theoretical considerations taking into account the quasi zero-dimensional nature of the active zone, clearly predict a strong reduction of the laser linewidth by appropriate tailoring of the QD material design. QD lasers with 2 and 5 QD layers were grown by molecular beam epitaxy (MBE). Distributed feedback (DFB) lasers were fabricated with integrated micro-heaters in form of meandric resistors. Especially developed etch stop layers provide accurate shaping of the laser ridges. The lasers are coupled in pairs by integrated 3dB-couplers to enable the realization of widely tunable laser arrays with a tuning range of 50 nm covering the C+ band. The purpose of these arrays is to provide compact, flexibly applicable and tunable laser sources for coherent detection. The linewidth measurements for the investigated devices are in good accordance to simulated values. This allows a targeted modification of the epitaxy and QD design in the future. With DFB lasers consisting of 5 QD layers a continuous single-mode thermal tuning range of up-to 10 nm per laser and a linewidth considerably below 1 MHz could be obtained. A comparison of the two designs confirms the theoretically predicted reduction of linewidth for the high-gain design with 5 QD layers, which clearly confirmed the first time directly the relationship of a low α-factor, as been realized by QD material, and the strongly reduced emission linewidth independent on other structural parameters.
Authors with CRIS profile
Involved external institutions
Israel (IL)How to cite
APA:
Becker, A., Bjelica, M., Sichkovskyi, V., Eyal, O., Rippien, A., Schnabel, F.,... Reithmaier, J.P. (2020). InP-basierte weit verstimmbare Quantenpunkt-Laser mit verteilten Rückkopplungsgittern und schmalen Emissionslinienbreiten. In Photonische Netze - 16. ITG-Fachtagung (pp. 186-189). Leipzig, DE: VDE Verlag GmbH.
MLA:
Becker, Annette, et al. "InP-basierte weit verstimmbare Quantenpunkt-Laser mit verteilten Rückkopplungsgittern und schmalen Emissionslinienbreiten." Proceedings of the 16. ITG-Fachtagung Photonische Netze - 16th ITG Conference on Photonic Networks, Leipzig VDE Verlag GmbH, 2020. 186-189.
BibTeX: Download