Red surface-emitting SLEDs
Jentzsch B, Gomez-Iglesias A, Tonkikh A, Witzigmann B (2020)
Publication Type: Conference contribution
Publication year: 2020
Journal
Publisher: SPIE
Book Volume: 11302
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: San Francisco, CA
ISBN: 9781510633674
DOI: 10.1117/12.2541968
Abstract
Surface-emitting InGaAlP SLEDs that are based on in-plane amplification along a horizontal waveguide are demonstrated. Total internal reflection at tilted etched micromirrors are used for the deflection of optical modes normal to the chip surface. Applying a bonding process of the etched wafer onto a new carrier, light can be emitted through the surface that was originally covered by the growth substrate. Depending on the waveguide geometry superluminescence as well as lasing operation is observed. In superluminescence operation an emission spectrum with a FWHM of 10nm centered at 637nm is obtained. The peak output power of the amplified spontaneous emission is up to ∼ 200mW which corresponds to a WPE of ∼ 6 %. In case of lasing (λ ∼ 639 nm) a peak output power larger than 1000mW at a WPE that exceeds 20% is achieved. In addition, an array configuration with radially aligned waveguides that contribute to a common far field is investigated as well.
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Germany (DE)How to cite
APA:
Jentzsch, B., Gomez-Iglesias, A., Tonkikh, A., & Witzigmann, B. (2020). Red surface-emitting SLEDs. In Jong Kyu Kim, Michael R. Krames, Martin Strassburg (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. San Francisco, CA, US: SPIE.
MLA:
Jentzsch, Bruno, et al. "Red surface-emitting SLEDs." Proceedings of the Light-Emitting Devices, Materials, and Applications XXIV 2020, San Francisco, CA Ed. Jong Kyu Kim, Michael R. Krames, Martin Strassburg, SPIE, 2020.
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