Carrier injection efficiency in III-nitride light emitting diodes: Effective potential correction
Witzigmann B, Romer F (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: OSA - The Optical Society
Book Volume: Part F189-PVLED 2020
Conference Proceedings Title: Optics InfoBase Conference Papers
Event location: Washington, DC
ISBN: 9781557528209
Abstract
A model for carrier injection efficiency of III-nitride based light emitters with multiple quantum wells is described. With a combination of semi-classical and quantum transport, it matches a wide range of experimental LED data for solid-state lighting.
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Germany (DE)How to cite
APA:
Witzigmann, B., & Romer, F. (2020). Carrier injection efficiency in III-nitride light emitting diodes: Effective potential correction. In Optics InfoBase Conference Papers. Washington, DC, US: OSA - The Optical Society.
MLA:
Witzigmann, Bernd, and Friedhard Romer. "Carrier injection efficiency in III-nitride light emitting diodes: Effective potential correction." Proceedings of the Optical Devices and Materials for Solar Energy and Solid-state Lighting, PVLED 2020, Washington, DC OSA - The Optical Society, 2020.
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