Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
Witzigmann B, Roemer F, Martens M, Kuhn C, Wernicke T, Kneissl M (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 10
Article Number: 095307
Journal Issue: 9
DOI: 10.1063/5.0021890
Abstract
Stimulated emission from AlGaN based quantum wells (QWs) emitting at ultraviolet wavelengths is investigated theoretically. Maxwell-Bloch equations in the second Born approximation are solved self-consistently with the Poisson equation. The valence band dispersion is obtained from a 6-band kp-model. For a QW emitting at around 270 nm with a thickness of 2.2 nm, an estimated FWHM of 10 meV for homogeneous broadening and an excitonic red shift of 100 meV are extracted under typical laser conditions. From a comparison to experimental data of stimulated emission, an inhomogeneous broadening energy of 39 meV FWHM is evaluated. Calculations show that high TE gain can be achieved for thin QWs around 2 nm thickness in a multiple QW arrangement or for single QWs thicker than 6 nm.
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APA:
Witzigmann, B., Roemer, F., Martens, M., Kuhn, C., Wernicke, T., & Kneissl, M. (2020). Calculation of optical gain in AlGaN quantum wells for ultraviolet emission. AIP Advances, 10(9). https://doi.org/10.1063/5.0021890
MLA:
Witzigmann, Bernd, et al. "Calculation of optical gain in AlGaN quantum wells for ultraviolet emission." AIP Advances 10.9 (2020).
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